Influence of p-GaN Barrier Distribution in the Active Region on the Performance of InGaN Based Light-emitting Diodes
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摘要: 采用APSYS软件分析了InGaN基发光二极管的垒层中p型掺杂量的分布及作用.研究结果表明当所有的p型掺杂量集中于最后一个垒层时，发光二极管的发光强度最大，大注入电流下的效率衰减量最小.其主要原因为优化垒层中p型掺杂量的分布有利于电子限制和空穴注入.
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关键词:
- 多量子阱
Abstract: The blue InGaN based light-emitting diodes (LEDs) with constant total p-doping amount in barriers but different doping distribution has been numerically studied by the APSYS simulation software in this paper. The simulation results demonstrated that with more p-doping amount centralized in the last barrier, higher output power was illustrated. In the meanwhile, the efficiency droop was markedly improved at injection current of 200mA. It is mainly attributed to more efficient electron blocking and hole injection as well as lower electron leakage current.-
Keywords:
- Multiple quantum wells
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[1]KIM M H, SCHUBERT M F, DAI Q, et al.Origin of efficiency droop in GaN-based light-emitting diodes[J].Appl Phys Lett,2007,91:183507-
[2]SCHUBERT M F, XU J, KIM J K, et al.Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop[J].Appl Phys Lett,2008,93:041102-
[3]DING K, ZENG Y P, WEI X C, et al.A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J].Appl Phys B: Lasers Opt,2009,97:465-468
[4]SHEN Y C, MUELLER G O, WATANABE S, et al.Auger recombination in InGaN measured by photoluminescence[J].Appl Phys Lett,2007,91:141101-
[5]KIM A Y, GO W, STEIGERWALD D A, et al.Performance of High-Power AlInGaN Light Emitting Diodes[J].Phys Status Solidi A,2001,188:15-21
[6]WANG C H, CHEN J R, CHIU C H, et al.Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths[J].IEEE Photon Technol Lett,2010,22:236-238
[7]BOCHKAREVA N I, VORONENKOV V V, GORBUNOV R I, et al.Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes[J].Appl Phys Lett,2010,96:133502-
[8]DAVID A, GRUNDMANN M J, KAEDING J F, et al.Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2008,92:053502-
[9]HAN S H, LEE D Y, LEE S J, et al.Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2009,94:231123-
[10]HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
[11]VURGAFTMAN I, MEYER J R.Band parameters for nitrogen-containing semiconductors[J].J Appl Phys,2003,94:3675-
[12]NEUFELD C J, CRUZ S C, FARRELL R M, et al.Effect of doping and polarization on carrier collection in InGaN quantum well solar cells[J].Appl Phys Lett,2011,98:243507-
[1]KIM M H, SCHUBERT M F, DAI Q, et al.Origin of efficiency droop in GaN-based light-emitting diodes[J].Appl Phys Lett,2007,91:183507-
[2]SCHUBERT M F, XU J, KIM J K, et al.Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop[J].Appl Phys Lett,2008,93:041102-
[3]DING K, ZENG Y P, WEI X C, et al.A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J].Appl Phys B: Lasers Opt,2009,97:465-468
[4]SHEN Y C, MUELLER G O, WATANABE S, et al.Auger recombination in InGaN measured by photoluminescence[J].Appl Phys Lett,2007,91:141101-
[5]KIM A Y, GO W, STEIGERWALD D A, et al.Performance of High-Power AlInGaN Light Emitting Diodes[J].Phys Status Solidi A,2001,188:15-21
[6]WANG C H, CHEN J R, CHIU C H, et al.Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths[J].IEEE Photon Technol Lett,2010,22:236-238
[7]BOCHKAREVA N I, VORONENKOV V V, GORBUNOV R I, et al.Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes[J].Appl Phys Lett,2010,96:133502-
[8]DAVID A, GRUNDMANN M J, KAEDING J F, et al.Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2008,92:053502-
[9]HAN S H, LEE D Y, LEE S J, et al.Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2009,94:231123-
[10]HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
[11]VURGAFTMAN I, MEYER J R.Band parameters for nitrogen-containing semiconductors[J].J Appl Phys,2003,94:3675-
[12]NEUFELD C J, CRUZ S C, FARRELL R M, et al.Effect of doping and polarization on carrier collection in InGaN quantum well solar cells[J].Appl Phys Lett,2011,98:243507-
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