Abstract: Binary compound semiconductors, such as GeSe and Sb₂Se₃, are considered promising photoelectrode materials due to their stable crystalline structures and excellent optoelectronic properties. However, their practical application is still hindered by significant interfacial recombination, low photogenerated carrier separation efficiencies, and limited stability. This paper systematically summarizes the primary preparation methods of GeSe and Sb₂Se₃, with a focus on interfacial passivation strategies and their effects on photoelectrochemical (PEC) performance. Furthermore, the potential application of GeSe in photo-thermal-electro coupling systems is discussed, offering valuable insights for the design of high-efficiency and stable photoelectrocatalytic materials.