应变诱导外延Ba0.6Sr0.4TiO3薄膜铁电介电性能的频率依赖特性

张宪贵; 宋建民; 康艳霜; 史孟飞

doi:10.6054/j.jscnun.2022051

应变诱导外延Ba_0.6Sr_0.4TiO₃薄膜铁电介电性能的频率依赖特性

张宪贵^{1, 2, ,},
宋建民¹,
康艳霜¹,
史孟飞¹

1.
河北农业大学渤海学院，沧州 061100
2.
燕山大学材料学院，秦皇岛 066000

基金项目:

河北省教育厅青年基金项目 QN2018001

河北省创新创业专项 S202110086039

河北农业大学一流本科课程专项 2021-BHKC-10

详细信息

通讯作者:
张宪贵，Email: lxzhxg@hebau.edu.cn

中图分类号: O469
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出版历程
- 收稿日期: 2021-11-21
- 网络出版日期: 2022-09-21
- 刊出日期: 2022-08-24

The Frequency-dependent Ferroelectric and Dielectric Properties of Strain-induced Epitaxial Ba_0.6Sr_0.4TiO₃ Thin Films

1.
School of Bohai, Hebei Agricultural University, Cangzhou 061100, China
2.
School of Material Science, Yanshan University, Qinhuangdao 066000, China

摘要

摘要: 基于修正的Landau-Devonshire唯象理论和Landau-Khalatnikov方程，研究了不同失配应变下外延Ba_0.6Sr_0.4TiO₃薄膜相稳定性和频率依赖的铁电介电性能。结果表明：室温下铁电c相、正交aa相和顺电相为稳态相且均为二级相变；在0.1 kHz的外加电场频率下，压应变增加了c相的面外剩余极化强度(P_r)和矫顽场(E_c)，而拉应变增加了aa相的面内剩余极化强度和矫顽场。此外，随着频率的增加，相界处P_r和E_c均增加，介电常数呈先快速后缓慢的下降趋势，最大调谐率逐渐减小且相应失配应变逐渐趋于零，这主要归因于频率的增加导致相变温度(ΔT_c)升高。进一步计算显示，面外的失配应变移动、调谐率降低和ΔT_c分别为0.017%、10.6%、7.3 ℃，其与面内结果(0.019%，9.7%，7.7 ℃)相近。
- 外延薄膜 /
- Ba_0.6Sr_0.4TiO₃ /
- 失配应变 /
- 频率 /
- 调谐率
Abstract: Phase stability and frequency-dependent ferroelectric and dielectric properties of epitaxial Ba_0.6Sr_0.4TiO₃ thin films under different misfit strains were investigated using a modified Landau-Devonshire phenomenological theory combined with Landau-Khalatnikov equation. The phase diagram analysis indicates that ferroelectric tetragonal (c), orthogonal (aa) and paraelectric phases are stable at room temperature and all phase transitions are of second order. The compressive misfit strain increases out-of-plane remnant polarization (P_r) and coercive field (E_c) in c phase while the tensile misfit strain augments in-plane P_r and E_c in aa phase at an electric field frequency of 0.1 kHz. Moreover, it is found that both polarization and coercive field increase with increasing frequency while the dielectric constant decreases rapidly first and then slowly. The maximum tunability decreases and the corresponding misfit strain gradually approaches zero, which is attributed to the enhancement of phase transition temperature (ΔT_c). The further calculation results reveal that the shift of misfit strain, decrease in tunability and ΔT_c are 0.017%, 10.6% and 7.3 ℃ respectively in the out-of-plane case, which are comparable to 0.019%, 9.7% and 7.7 ℃ respectively for the in-plane case.
- epitaxial thin film /
- Ba_0.6Sr_0.4TiO₃ /
- misfit strain /
- frequency /
- tunability

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图 1 相图

Figure 1. The phase diagram

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图 2 0.1 kHz电滞回线和介电曲线应变依赖性

Figure 2. The misfit strain-dependent hysteresis loops and dielectric curves at 0.1 kHz

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图 3 相界处电滞回线、零场介电常数和矫顽场频率依赖性

Figure 3. The frequency-dependent hysteresis loops, zero-field dielectric constants and coercive fields at phase boundaries

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图 4 不同应变调谐率和零场介电常数的频率依赖性

Figure 4. The frequency-dependent tunability and zero-field dielectric constant at different misfit strains

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表 1 BST60/40薄膜计算参数

Table 1 The calculation parameters for BST60/40 film

参数	值
T/℃	25
T_c/℃	5
C/℃	1.22×10⁶
a₁₁/(C^-2·m⁵·F)	(2.16T+462)×10⁶
a₁₂/(C^-2·m⁵·F)	7.98×10⁸
S₁₁/(m²·N^-1)	5.12×10^-12
S₁₂/(m²·N^-1)	-1.65×10^-12
S₄₄/(m²·N^-1)	5.86×10^-12
Q₁₁/(m⁴·C^-2)	0.1
Q₁₂/(m⁴·C^-2)	-0.034
Q₄₄/(m⁴·C^-2)	0.029

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