The Preparation and Magnetic and Optical Properties of Cu1-xCoxInTe2 Diluted Magnetic Semiconductor

WANG Jingnan; GUO Yongquan; YIN Linhan; ZHAO Xing; GUO Xinpeng; XIE Nana

doi:10.6054/j.jscnun.2022018

Journal of South China Normal University (Natural Science Edition) > 2022 > 54(2): 1-6. > DOI: 10.6054/j.jscnun.2022018

WANG Jingnan, GUO Yongquan, YIN Linhan, ZHAO Xing, GUO Xinpeng, XIE Nana. The Preparation and Magnetic and Optical Properties of Cu_1-xCo_xInTe₂ Diluted Magnetic Semiconductor[J]. Journal of South China Normal University (Natural Science Edition), 2022, 54(2): 1-6. DOI: 10.6054/j.jscnun.2022018

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The Preparation and Magnetic and Optical Properties of Cu_1-xCo_xInTe₂ Diluted Magnetic Semiconductor

School of Energy Power and Mechanical Engineering, North China Electric Power University, Beijing 102206, China

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Received Date: September 22, 2021
Available Online: May 11, 2022

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Abstract

Abstract

The diluted magnetic semiconductors Cu_1-xCo_xInTe₂ (Co doping ratio x=0, 0.1, 0.2, 0.3) was synthesized through vacuum arc melting. X-ray diffractometer (XRD), vibrating sample magnetometer(VSM), and UV-Vis-NIR spectrometer were used to investigate their crystal structures and magnetic and optical properties, respectively. The main phases of Cu_1-xCo_xInTe₂ crystalline has tetragonal structure with a space group of I42d. The atomic occupations are 4a(0, 0, 0) for Co and Cu atoms, 4b(0, 0, 1/2) for In and 8d(x, 1/4, 1/8) for Te, respectively. Cu_1-xCo_xInTe₂ shows room temperature ferromagnetic characteristics, and their field dependence of magnetization follows a Langevin model. Their saturation magnetization increases with increased x. The bandgaps of Cu_1-xCo_xInTe₂ can be adjusted by controlling the doping amount of Co, which makes possible its potential application as photovoltaic material.
- CuInTe₂,
- Co doping,
- magnetic property,
- optical property

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References (26)

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