Influence of p-GaN Barrier Distribution in the Active Region on the Performance of InGaN Based Light-emitting Diodes

The blue InGaN based light-emitting diodes (LEDs) with constant total p-doping amount in barriers but different doping distribution has been numerically studied by the APSYS simulation software in this paper. The simulation results demonstrated that with more p-doping amount centralized in the last barrier, higher output power was illustrated. In the meanwhile, the efficiency droop was markedly improved at injection current of 200mA. It is mainly attributed to more efficient electron blocking and hole injection as well as lower electron leakage current.