Simulation of Thermal Stress in SiO2 Thin Film

Abstract: The internal stress in thin film affects the application of thin film strongly. The finite element modeling method was used to simulate the thermal stress in SiO2 thin film，and the rationality of the model is proved. The film thermal stress on the size and distribution is calculated, and different results are obtained by changing the growth temperature, the film thickness and the fundus thickness, respectively. The result is in a good agreement with the theory.