Progress in the Research on the Piezotronic and Piezo-Phototronic Effects of Non-Polar Nanowires

The coupling between piezoelectric polarization and semiconductor properties has unique physical properties, and as a result, some new research fields such as piezoelectric electronics and piezoelectric optoelectronics have emerged, which has attracted attention. The article reviews the pressure effects of electrical and piezoelectric optoelectronics on metal/semiconductor(M/S) and p-n junctions, introducing the basic progress in the research on c-axis and a-axis piezoelectric electronics and piezoelectric optoelectronics and their application. The piezoelectric effect in c-axis nanostructures is an interface effect. It uses the piezoelectric polarization generated at the local M/S contact or the homo/heterojunction of the nanostructure to control the carrier across the interface. Transmission and the corresponding optoelectronic process is performed by photo-induced carriers. In non-polar a-axis nanowires, external strain-induced piezoelectric charges are distributed along the entire polar surface and across the nanowires width. The charge carrier transport process of a piezoelectric semiconductor is regulated by the piezoelectric effect throughout the nanostructure.