Cu1-x Cox InTe2稀磁半导体的制备及磁学、光学性质

王京南; 郭永权; 殷林瀚; 赵兴; 郭新鹏; 解娜娜

doi:10.6054/j.jscnun.2022018

Cu_1-x Co_x InTe₂稀磁半导体的制备及磁学、光学性质

doi: 10.6054/j.jscnun.2022018

华北电力大学能源动力与机械工程学院，北京 102206

基金项目:

国家重点研发项目 2018YFB0905600

详细信息

通讯作者:
郭永权，Email: yqguo@ncepu.edu.cn

中图分类号: TB34
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- 文章访问数: 104
- HTML全文浏览量: 53
- PDF下载量: 52
- 被引次数: 0
出版历程
- 收稿日期: 2021-09-23
- 网络出版日期: 2022-05-12
- 刊出日期: 2022-04-25

The Preparation and Magnetic and Optical Properties of Cu_1-xCo_xInTe₂ Diluted Magnetic Semiconductor

School of Energy Power and Mechanical Engineering, North China Electric Power University, Beijing 102206, China

摘要

摘要: 采用真空电弧熔炼技术制备Cu_1-xCo_xInTe₂(Co元素掺杂比x=0, 0.1, 0.2, 0.3)稀磁半导体。利用X射线衍射仪(XRD)、振动样品磁强计(VSM)和紫外可见近红外分光光度计(UV-Vis-NIR)分别表征样品的晶体结构、磁学性质和光学性质。研究表明：4种稀磁半导体中主相均为Cu_1-xCo_xInTe₂，具有四方结构，空间群为I42d。掺杂的Co原子与Cu原子共同占据4a(0, 0, 0)晶位，In原子占据4b(0, 0, 1/2)晶位，Te原子占据8d(x, 1/4, 1/8)晶位。Cu_1-xCo_xInTe₂呈现室温铁磁性，其室温磁化遵循Langevin模型，随着x的增加，其饱和磁化强度增大。调控Co掺杂量，可以提高Cu_1-xCo_xInTe₂稀磁半导体的光吸收带宽E_g，使其具有太阳能光伏材料的应用可能性。
- CuInTe₂ /
- Co掺杂 /
- 磁学性质 /
- 光学性质
Abstract: The diluted magnetic semiconductors Cu_1-xCo_xInTe₂ (Co doping ratio x=0, 0.1, 0.2, 0.3) was synthesized through vacuum arc melting. X-ray diffractometer (XRD), vibrating sample magnetometer(VSM), and UV-Vis-NIR spectrometer were used to investigate their crystal structures and magnetic and optical properties, respectively. The main phases of Cu_1-xCo_xInTe₂ crystalline has tetragonal structure with a space group of I42d. The atomic occupations are 4a(0, 0, 0) for Co and Cu atoms, 4b(0, 0, 1/2) for In and 8d(x, 1/4, 1/8) for Te, respectively. Cu_1-xCo_xInTe₂ shows room temperature ferromagnetic characteristics, and their field dependence of magnetization follows a Langevin model. Their saturation magnetization increases with increased x. The bandgaps of Cu_1-xCo_xInTe₂ can be adjusted by controlling the doping amount of Co, which makes possible its potential application as photovoltaic material.
- CuInTe₂ /
- Co doping /
- magnetic property /
- optical property

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图 1 Cu_1-xCo_xInTe₂(x=0, 0.1, 0.2, 0.3)稀磁半导体的XRD图谱

Figure 1. The XRD patterns of Cu_1-xCo_xInTe₂(x=0, 0.1, 0.2, 0.3) diluted magnetic semiconductors

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图 2 Cu_0.8Co_0.2InTe₂的XRD精修图谱

Figure 2. The refined XRD pattern of Cu_0.8Co_0.2InTe₂

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图 3 Cu_1-xCo_xInTe₂(x=0.1, 0.2, 0.3)室温磁化曲线

Figure 3. The magnetization curves of Cu_1-xCo_xInTe₂(x=0.1, 0.2, 0.3) at room temperature

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图 4 Cu_1-xCo_xInTe₂稀磁半导体的吸收光谱

Figure 4. The absorption spectra of Cu_1-xCo_xInTe₂ diluted magnetic semiconductors

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图 5 Cu_1-xCo_xInTe₂稀磁半导体的(αhν)²-(hν)曲线

Figure 5. The (αhν)²-(hν) curves of Cu_1-xCo_xInTe₂ diluted magnetic semiconductors

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表 1 Cu_0.8Co_0.2InTe₂衍射峰的指标化结果

Table 1. The index-results of diffraction peaks in Cu_0.8Co_0.2InTe₂

h	k	l	sin²θ实验值	sin²θ计算值	2θ实验值	2θ计算值
1	1	2	0.046 334	0.046 318	24.861	24.857
1	0	3	0.050 145	0.050 108	25.880	25.870
2	0	0	0.061 841	0.061 838	28.799	28.798
2	1	3	0.111 966	0.111 946	39.098	39.094
2	2	0	0.123 564	0.123 676	41.160	41.180
3	0	1	0.143 007	0.142 985	44.440	44.436
3	1	2	0.170 001	0.169 994	48.700	48.699
3	2	3	0.235 612	0.235 622	58.077	58.079
4	0	0	0.247 283	0.247 352	59.640	59.649
2	1	7	0.265 932	0.265 941	62.087	62.088
4	1	1	0.266 789	0.266 661	62.198	62.181
3	1	6	0.293 302	0.293 190	65.582	65.568
3	2	5	0.297 133	0.297 220	66.063	66.074
3	0	7	0.327 838	0.327 779	69.859	69.852
4	2	4	0.370 780	0.370 788	75.022	75.023
5	0	1	0.390 275	0.390 337	77.323	77.331
注：M(18)=36，F(18)=22。

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表 2 Cu_1-xCo_xInTe₂稀磁半导体中主相点阵常数及晶胞体积

Table 2. The lattice constants and cell volumes of main phase in Cu_1-xCo_xInTe₂ diluted semiconductors magnetic

参数	CuInTe₂	Cu_0.9Co_0.1InTe₂	Cu_0.8Co_0.2InTe₂	Cu_0.7Co_0.3InTe₂
a/nm	0.619 2(1)	0.619 1(9)	0.619 5(1)	0.619 2(0)
c/nm	1.240 6(1)	1.240 6(3)	1.241 4(4)	1.240 7(4)
V/nm³	0.475 657	0.475 503	0.476 425	0.475 695
F	32(17)	19(16)	36(18)	18(18)
M	19(17)	11(16)	22(18)	12(18)

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表 3 Cu_1-xCo_xInTe₂稀磁半导体的Rietveld精修结果

Table 3. The Rietveld-refined results of Cu_1-xCo_xInTe₂ diluted magnetic semiconductors

参数	CuInTe₂	Cu_0.9Co_0.1InTe₂	Cu_0.8Co_0.2InTe₂	Cu_0.7Co_0.3InTe₂
a/nm	0.619 1(3)	0.619 3(4)	0.619 2(7)	0.619 2(1)
c/nm	1.240 7(0)	1.241 2(9)	1.241 0(0)	1.240 7(1)
V/nm³	0.475 5(9)	0.476 1(4)	0.475 9(2)	0.475 7(1)
Cu(4a)或Co(4a)坐标	(0, 0, 0)	(0, 0, 0)	(0, 0, 0)	(0, 0, 0)
In(4b)坐标	(0, 0, 1/2)	(0, 0, 1/2)	(0, 0, 1/2)	(0, 0, 1/2)
Te(8d)坐标	(0.225 46, 1/4, 1/8)	(0.221 29, 1/4, 1/8)	(0.222 29, 1/4, 1/8)	(0.210 68, 1/4, 1/8)
R_wp/%	9.919	10.877	17.463	19.919
R_p/%	7.374	7.491	10.989	12.224

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表 4 Cu_1-xCo_xInTe₂在室温下的磁化曲线拟合结果

Table 4. The magnetization curve fitting results of Cu_1-xCo_xInTe₂ at room temperature

样品	M_S/(emu·g^-1)	R²
Cu_0.9Co_0.1InTe₂	2.929 18±0.003 67	0.986 44
Cu_0.8Co_0.2InTe₂	4.044 37±0.005 68	0.982 38
Cu_0.7Co_0.3InTe₂	7.112 56±0.007 73	0.990 54

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