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基于非富勒烯受体IEICO-4F的倍增型有机光电探测器

王建彬 曾夏辉 周笔 余华梁 周赢武

王建彬, 曾夏辉, 周笔, 余华梁, 周赢武. 基于非富勒烯受体IEICO-4F的倍增型有机光电探测器[J]. 华南师范大学学报(自然科学版), 2021, 53(4): 1-7. doi: 10.6054/j.jscnun.2021051
引用本文: 王建彬, 曾夏辉, 周笔, 余华梁, 周赢武. 基于非富勒烯受体IEICO-4F的倍增型有机光电探测器[J]. 华南师范大学学报(自然科学版), 2021, 53(4): 1-7. doi: 10.6054/j.jscnun.2021051
WANG Jianbin, ZENG Xiahui, ZHOU Bi, YU Hualiang, ZHOU Yingwu. Photomultiplication-type Organic Photodetectors Based on Non-fullerene Acceptor IEICO-4F[J]. Journal of South China normal University (Natural Science Edition), 2021, 53(4): 1-7. doi: 10.6054/j.jscnun.2021051
Citation: WANG Jianbin, ZENG Xiahui, ZHOU Bi, YU Hualiang, ZHOU Yingwu. Photomultiplication-type Organic Photodetectors Based on Non-fullerene Acceptor IEICO-4F[J]. Journal of South China normal University (Natural Science Edition), 2021, 53(4): 1-7. doi: 10.6054/j.jscnun.2021051

基于非富勒烯受体IEICO-4F的倍增型有机光电探测器

doi: 10.6054/j.jscnun.2021051
基金项目: 

福建省自然科学基金项目 2018J01420

福建省教育厅中青年教师教育科研项目 JAT200428

详细信息
    通讯作者:

    王建彬,Email:wangjianbinnewlife@foxmail.com

  • 中图分类号: O472+.8; TN304.5

Photomultiplication-type Organic Photodetectors Based on Non-fullerene Acceptor IEICO-4F

  • 摘要: 以非富勒烯材料O-IDTBR和IEICO-4F为电子受体,采用溶液法制备结构为ITO/PEDOT∶PSS/P3HT∶O-IDTBR/Al和ITO/PEDOT∶PSS/P3HT∶IEICO-4F/Al的2种倍增型有机光电探测器. IEICO-4F器件在波长400 nm和790 nm处的最高外量子效率(EQE)分别达7 220% 和1 610%. 在-15 V偏压下,IEICO-4F器件EQE大于100%的光谱响应范围(300~840 nm)比O-IDTBR器件(320~740 nm)宽120 nm. 与-15 V偏压下的O-IDTBR器件相比,IEICO-4F器件在波长400、510、600、790 nm处的EQE(2 630%、1 220%、1 900%、409%)分别提升1.7、1.2、0.5、24.5倍以上. 此外,IEICO-4F器件在400、510、600、790 nm处的探测灵敏度(4.8×1012、2.8×1012、5.2×1012、1.5×1012 cm·Hz1/2·W-1)分别是O-IDTBR器件的3.2、2.5、1.8、30.6倍. 结果表明:采用吸收与P3HT更互补(带隙更窄)的非富勒烯材料IEICO-4F为电子受体,有利于提升倍增型有机光电探测器的性能(特别是器件对近红外光的响应与探测能力),并拓宽器件的光谱响应范围.
  • 图  1  材料能级示意图

    Figure  1.  The schematic diagram of material energy levels

    图  2  材料分子结构和器件结构的示意图

    Figure  2.  The molecular structure of materials and the schematic diagram of device structure

    图  3  器件的J-V曲线

    Figure  3.  The J-V curves of devices

    图  4  器件EQE光谱和材料归一化吸收光谱

    Figure  4.  The EQE spectra of devices and the normalized absorption spectra of materials

    图  5  器件响应度与探测灵敏度光谱

    Figure  5.  The responsivity and detectivity spectra of devices

    图  6  器件电荷传输的示意图

    Figure  6.  The schematic diagram of charge carrier transport in devices

    表  1  O-IDTBR和IEICO-4F器件在不同偏压与波长下的EQE、响应度和探测灵敏度

    Table  1.   The EQE, responsivity and detectivity of devices based on O-IDTBR and IEICO-4F under different biases and wavelengths

    器件 λ/nm EQE/% R(-15 V)/ (A·W-1) D*(-15 V)/ (cm·Hz1/2·W-1)
    U=-5 V U=-10 V U=-15 V U=-20 V
    O-IDTBR 400 22.8 260 954 2 310 3.1 1.5×1012
    510 4.8 118 538 1 490 2.2 1.1×1012
    600 37.8 344 1 260 2 940 6.1 2.9×1012
    790 0.5 5 16 27 0.1 4.9×1010
    IEICO-4F 400 81.0 727 2 630 7 220 8.5 4.8×1012
    510 22.7 268 1 220 4 460 5.0 2.8×1012
    600 62.4 513 1 900 5 460 9.2 5.2×1012
    790 8.3 101 409 1 610 2.6 1.5×1012
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出版历程
  • 收稿日期:  2021-03-14
  • 网络出版日期:  2021-09-03
  • 刊出日期:  2021-08-25

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