STUDY OF ANISOTROPIC ETCHING OF SI SUBSTRATE
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摘要: 利用KOH溶液的各向异性腐蚀，通过研究温度，异丙醇（IPA）及超声波振动对硅衬底腐蚀的影响，在硅（001）平面衬底上刻蚀出侧面为（111）面的槽状图形衬底.在此基础上，实现了GaN在Si图形衬底（111）侧面的生长.X射线双晶衍射测量GaN薄膜的Bragg角为18.45，表明我们在硅图形衬底上成功的生长出了（1-101）半极性GaN薄膜.其X射线衍射峰半高宽为1556弧秒.Abstract: Adopting KOH solution anisotropy etching method, we obtained grooves with side facets on a Si substrate by studying the effects of isopropyl alcohol (IPA) and ultrasonic agitation on the etching. Based on this, we achieved the lateral epitaxial growth of GaN on planes of Si patterned substrate. The Bragg angle of GaN measured by double crystal X-ray diffraction (DCXRD) is 18.45,which indicates that we have grown semi-polar GaN on Si patterned substrate. The value of full-width at half-maximum (FWHM) of GaN layer is 1556 Arc sec.
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