Abstract: The effect of AlGaN as low indium component quantum well barrier layers on the physical properties of dual-wavelength light-emitting diodes (LEDs) based on GaN has been investigated numerically. The simulation results show that the AlGaN barrier layers can improve the distribution of electrons and holes more uniformly and realize the radiation equilibrium of electrons and holes in the mixture multi-quantum wells, and further reduce the efficiency droop of dual-blue wavelength LEDs at high current. In addition, the spontaneous emission rate of two kinds of quantum wells can be adjusted through control of Al composition of the AlGaN barrier layers. It can be found from the results that the emission spectrum of dual-blue wavelength LEDs is more stable at low current and high current with the Al composition of 0.08, while the emission spectrum is more stable at the current between 40~100mA with the Al composition of 0.09.