基区重掺杂对InGaAs/InAlAs突变HBT电流输运的影响

THE ANALYSIS OF CURRENT TRANSPORT ON BASE IN ABRUPT InAlAs/InGaAs HBT BY HEAVY IMPURITY DOPING

摘要: 摘要：基区重掺杂产生禁带变窄效应（BGN），从而导致HBT突变异质结界面的势垒高度发生改变，这会严重影响载流子的电流输运.本文基于Jain-Roulston禁带收缩模型及电流输运机理，对电子的传输进行了深入的分析，并与实验数据进行了比较，结果表明：在基区重掺杂的条件下，考虑BGN对电流输运的影响，对于准确描述电流的输运现象是非常有必要的.
- 重掺杂禁带变窄 Jain-Roulston模型
Abstract: Abstact: Heavy impurity doping brings about the so-called Band Gap Narrowing (BGN) effects, which will lead to the shift of the height of the energy barrier through the abrupt HBT interfaces that effects the transport of carriers a lot. In this article, the phenomenon of transport is discussed according to the J-R model and current transport mechanism. By comparison with the experimental data, it can be concluded that BGN is very necessary for an accurate description on the current transport mechanism.
- symmetrical and heavy impurity doping bandgap narrowing Jain-Roulston model