外延Ba0.6Sr0.4TiO3铁电薄膜的制备及介电储能性能

Preparation of Epitaxial Ba0.6Sr0.4TiO3 Ferroelectric Thin Film and Its Dielectric Energy Storage Performance

  • 摘要: 利用偏轴磁控溅射技术,在(001)LaAlO3单晶衬底上构架了Pt/Ba0.6Sr0.4TiO3(BST)/La0.5Sr0.5CoO3(LSCO)铁电电容器,研究了BST薄膜的结构与形貌、介电、漏电和储能性能。结果表明:BST薄膜为外延结构生长,表面光滑致密,其均方根粗糙度为1.228 nm。Pt/BST/LSCO电容器具有优异的介电性能,100 kHz频率下调谐率和最大损耗分别为73.73%和0.078,漏电流密度较低(10-6A/cm2量级)。此外,BST薄膜展现了良好的储能特性及温度稳定性,在10 kHz频率和2 000 kV/cm外加场强下,其室温总储能密度、有效储能密度和储能效率分别为27.01 J/cm3、16.03 J/cm3和59.4%;在1 200 kV/cm外加场强下,温度为105 ℃时储能效率可高达72.2%,这主要归因于较高温度促进了离子的热运动,从而有效提升了储能效率。

     

    Abstract: A Pt/Ba0.6Sr0.4TiO3 (BST)/La0.5Sr0.5CoO3 (LSCO) ferroelectric capacitor was fabricated on (001) LaAlO3 single crystal substrate using off-axis magnetron sputtering technology. The structure, morphology, and various properties, including dielectric, leakage, and energy storage performance of the BST film, were investigated in detail. The results indicate that the BST thin film is grown epitaxially and has a smooth and dense surface with a root mean square roughness of 1.228 nm. The Pt/BST/LSCO capacitor exhibits excellent dielectric properties with tunability and maximum loss of 73.73% and 0.078 at a frequency of 100 kHz, respectively, as well as lower leakage current densities (on the order of 10-6 A/cm2). In addition, the BST thin film demonstrates favorable energy storage performance and temperature stability. At a frequency of 10 kHz and an applied electric field of 2 000 kV/cm, the total energy storage density, effective energy storage density, and energy storage efficiency at room temperature are 27.01 J/cm3, 16.03 J/cm3, and 59.4%, respectively. With increasing temperature up to 105 ℃, the energy storage efficiency can reach as high as 72.2% with an applied electric field of 1 200 kV/cm, which can be attributed to the higher temperature promoting the thermal movement of ions, thereby effectively improving the energy storage efficiency.

     

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