晶圆级二维单晶材料生长的研究进展

The Research Progress on the Growth of Wafer-scale Two-Dimensional Single-crystal Materials

  • 摘要: 低维材料因其原子级的物理尺寸而拥有独特的物理化学性质. 以石墨烯为代表的二维材料具有优越的光学、电学、力学及热学性能,在电子、光电、能源、催化等领域具有巨大的应用潜力. 大尺寸、高质量的单晶材料是大规模高端器件的应用基础. 为此,研究者们致力于实现晶圆级二维单晶材料的制造研究. 利用化学气相沉积法(CVD)制备二维材料具有薄膜质量高、可控性强、均匀性好等优点,因此,CVD成为制备高质量二维单晶材料的首选. 文章从二维导电石墨烯、绝缘氮化硼和半导体过渡金属硫族化合物入手,总结了近年来利用CVD技术外延制造二维单晶薄膜的研究进展,讨论了大面积二维单晶材料的制备策略与生长机理,指出了目前存在的问题,对未来高质量二维单晶薄膜的制备方法进行了展望. 该综述为进一步推动二维单晶材料的规模化应用提供借鉴.

     

    Abstract: Low-dimensional materials have unique physical and chemical properties due to their atomic-scale size. Two-dimensional (2D) materials, such as graphene, have superior optical, electrical, mechanical, and thermal properties and great application potential in electronics, optoelectronics, energy, catalysis and other fields. Large-size high-quality single crystals are the basis of large-scale device applications. To this end, researchers have focused on the wafer-scale production of 2D single-crystal materials. The chemical vapor deposition (CVD) method has the advantages of high quality, strong controllability and good uniformity and has gradually become the first choice for the synthesis of high-quality 2D single crystals. The recent progress in research on 2D single-crystal films grown with the CVD method is summarized in terms of the conducting graphene, insulating hexagonal boron nitride and semiconducting transition metal chalcogenides. The synthetic strategy and growth mechanism of large-area 2D materials are discussed. The existing problems are pointed out, and the growth of high-quality 2D single-crystal films are predicted. The review provides a reference for further promoting the real applications of 2D single crystals.

     

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