Photomultiplication-type Organic Photodetectors Based on Non-fullerene Acceptor IEICO-4F
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摘要: 以非富勒烯材料O-IDTBR和IEICO-4F为电子受体，采用溶液法制备结构为ITO/PEDOT∶PSS/P3HT∶O-IDTBR/Al和ITO/PEDOT∶PSS/P3HT∶IEICO-4F/Al的2种倍增型有机光电探测器. IEICO-4F器件在波长400 nm和790 nm处的最高外量子效率(EQE)分别达7 220% 和1 610%. 在-15 V偏压下，IEICO-4F器件EQE大于100%的光谱响应范围(300~840 nm)比O-IDTBR器件(320~740 nm)宽120 nm. 与-15 V偏压下的O-IDTBR器件相比，IEICO-4F器件在波长400、510、600、790 nm处的EQE(2 630%、1 220%、1 900%、409%)分别提升1.7、1.2、0.5、24.5倍以上. 此外，IEICO-4F器件在400、510、600、790 nm处的探测灵敏度(4.8×1012、2.8×1012、5.2×1012、1.5×1012 cm·Hz1/2·W-1)分别是O-IDTBR器件的3.2、2.5、1.8、30.6倍. 结果表明：采用吸收与P3HT更互补(带隙更窄)的非富勒烯材料IEICO-4F为电子受体，有利于提升倍增型有机光电探测器的性能(特别是器件对近红外光的响应与探测能力)，并拓宽器件的光谱响应范围.
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关键词:
- 溶液法 /
- 非富勒烯 /
- 电子受体 /
- 倍增型有机光电探测器 /
- 近红外
Abstract: With the solution-processing method, photomultiplication (PM)-type organic photodetectors (OPDs) were fabricated with the structures of ITO/PEDOT: PSS/P3HT: IEICO-4F/Al and ITO/PEDOT: PSS/P3HT: O-IDTBR/Al, in which non-fullerene acceptor materials IEICO-4F and O-IDTBR were used as electron acceptors. The highest external quantum efficiency (EQE) of the device based on IEICO-4F-can reach 7 220% and 1 610% at 400 nm and 790 nm, respectively. Under -15 V bias, the EQE of IEICO-4F-based device exceeds 100% in the range of 300 to 840 nm, which is about 120 nm broader than O-IDTBR-based-devices (320 to 740 nm). Compared with the O-IDTBR-based device under -15 V bias, the EQEs (2 630%, 1 220%, 1 900%, 409%) of the IEICO-4F-based device at the wavelength of 400, 510, 600 and 790 nm are 1.7, 1.2, 0.5 and 24.5 times larger, respectively. In addition, the detectivity of IEICO-4F-based device at 400, 510, 600 and 790 nm (4.8×1012, 2.8×1012, 5.2×1012 and 1.5×1012 cm·Hz1/2·W-1) are 3.2, 2.5, 1.8 and 30.6 times as large as those of the O-IDTBR-based device, respectively. These results show that the use of non-fullerene materials IEICO-4F (narrower band gap) with absorption more complementary to P3HT as electron acceptors is beneficial for improving the performance of PM-type OPDs, especially the responsivity and detectivity in near-infrared region, with broadened spectral response range. -
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图 2 材料分子结构和器件结构的示意图
Figure 2. The molecular structure of materials and the schematic diagram of device structure
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图 4 器件EQE光谱和材料归一化吸收光谱
Figure 4. The EQE spectra of devices and the normalized absorption spectra of materials
表 1 O-IDTBR和IEICO-4F器件在不同偏压与波长下的EQE、响应度和探测灵敏度
Table 1 The EQE, responsivity and detectivity of devices based on O-IDTBR and IEICO-4F under different biases and wavelengths
器件 λ/nm EQE/% R(-15 V)/ (A·W-1) D*(-15 V)/ (cm·Hz1/2·W-1) U=-5 V U=-10 V U=-15 V U=-20 V O-IDTBR 400 22.8 260 954 2 310 3.1 1.5×1012 510 4.8 118 538 1 490 2.2 1.1×1012 600 37.8 344 1 260 2 940 6.1 2.9×1012 790 0.5 5 16 27 0.1 4.9×1010 IEICO-4F 400 81.0 727 2 630 7 220 8.5 4.8×1012 510 22.7 268 1 220 4 460 5.0 2.8×1012 600 62.4 513 1 900 5 460 9.2 5.2×1012 790 8.3 101 409 1 610 2.6 1.5×1012 
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