Abstract: This paper will give a systematic introduction to the basic working principles of FeFET, especially we will focus on the material design rules in the FeFET, the main ferroelectric materials and high-K buffer layer materials investigated, and the electrical properties of their corresponding FeFET devices. Furthermore the latest research progress on FeFET such as FeCMOS logic circuits, FeNAND flash memory circuits, and novel FeFET device structures based on oxide semiconductor and organic semiconductor will also be introduced. Finally the possible future research prospect on this field will be suggested.